Magnetic Random Access Memory

ABSTRACT

A device includes a magnetic tunnel junction (MTJ) structure and a cap layer in contact with the MTJ structure. The device also includes a spin-on material layer in contact with a sidewall portion of the cap layer and a conducting layer in contact with at least the spin-on material layer and a portion of the MTJ structure. The cap layer has been etched to expose a portion of an electrode contact layer of the MTJ structure. The conducting layer is in electrical contact with the exposed portion of the electrode contact layer of the MTJ structure.

I. CLAIM OF PRIORITY

The present application claims priority from and is a divisional of U.S.patent application Ser. No. 12/164,357 filed on Jun. 30, 2008 andentitled “System and Method to Fabricate Magnetic Random Access Memory,”the contents of which are expressly incorporated herein by reference intheir entirety.

II. FIELD

The present disclosure is generally related to magnetic random accessmemory.

III. DESCRIPTION OF RELATED ART

Advances in technology have resulted in smaller and more powerfulcomputing devices. For example, there currently exist a variety ofportable personal computing devices, including wireless computingdevices, such as portable wireless telephones, personal digitalassistants (PDAs), and paging devices that are small, lightweight, andeasily carried by users. More specifically, portable wirelesstelephones, such as cellular telephones and Internet Protocol (IP)telephones, can communicate voice and data packets over wirelessnetworks. Further, many such wireless telephones include other types ofdevices that are incorporated therein. For example, a wireless telephonecan also include a digital still camera, a digital video camera, adigital recorder, and an audio file player. Also, such wirelesstelephones can process executable instructions, including softwareapplications, such as a web browser application, that can be used toaccess the Internet. As such, these wireless telephones can includesignificant computing capabilities.

Reducing power consumption has led to smaller circuitry feature sizesand operating voltages within such portable devices. Reduction offeature size and operating voltages, while reducing power consumption,also increases sensitivity to manufacturing process variations.Fabrication techniques that increase reliability of memory devices withreduced feature size are therefore desirable.

IV. SUMMARY

In a particular embodiment, a method includes depositing a cap layer ona magnetic tunnel junction (MTJ) structure. The method further includesdepositing a first spin-on material layer over the cap layer and etchingthe first spin-on material layer and at least a portion of the caplayer.

In another particular embodiment, a device includes a magnetic tunneljunction (MTJ) structure and a cap layer in contact with the MTJstructure. The device also includes a spin-on material layer in contactwith a sidewall portion of the cap layer and a conducting layer incontact with at least the spin-on material layer and a portion of theMTJ structure. The cap layer has been etched to expose a portion of anelectrode contact layer of the MTJ structure. The conducting layer is inelectrical contact with the exposed portion of the electrode contactlayer of the MTJ structure.

In another particular embodiment, the device is formed by depositing acap layer on an MTJ structure and depositing a spin-on material layerover the cap layer. The device is further formed by etching the spin-onmaterial layer and at least a portion of the cap layer.

In another particular embodiment, the device is formed by depositing acap layer on an MTJ structure and selecting one of a convex profile anda concave profile of the first spin-on material layer. The device isfurther formed by depositing the first spin-on material layer over thecap layer and etching the first spin-on material layer and at least aportion of the cap layer.

One particular advantage provided by at least one of the disclosedembodiments to fabricate magnetic random access memory is an improvedyield. Another particular advantage provided by at least one of thedisclosed embodiments is improved reliability of a magnetic randomaccess memory.

Other aspects, advantages, and features of the present disclosure willbecome apparent after review of the entire application, including thefollowing sections: Brief Description of the Drawings, DetailedDescription, and the Claims.

V. BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional diagram of a particular illustrativeembodiment depicting deposition of a cap layer of a magnetic randomaccess memory in fabrication;

FIG. 2 is a cross-sectional diagram of a particular illustrativeembodiment depicting deposition of an interlayer dielectric (ILD) of amagnetic random access memory in fabrication;

FIG. 3 is a cross-sectional diagram of a particular illustrativeembodiment depicting a chemical-mechanical planarization (CMP) of amagnetic random access memory in fabrication;

FIG. 4 is a cross-sectional diagram of a particular illustrativeembodiment of a magnetic random access memory in fabrication;

FIG. 5 is a cross-sectional diagram of a particular illustrativeembodiment depicting deposition of a spin-on material (SOM) layer of amagnetic random access memory in fabrication;

FIG. 6 is a cross-sectional diagram of a particular illustrativeembodiment depicting etching of a spin-on material layer and a cap layerof a magnetic random access memory in fabrication;

FIG. 7 is a cross-sectional diagram of a particular illustrativeembodiment depicting a random access memory after etching of the spin-onmaterial layer and the cap layer during fabrication;

FIG. 8 is a cross-sectional diagram of a particular illustrativeembodiment depicting deposition of a second spin-on material (SOM) layerof a magnetic random access memory during fabrication;

FIG. 9 is a cross-sectional diagram of a particular illustrativeembodiment depicting etch of a second spin-on material layer and a caplayer of a magnetic random access memory in fabrication;

FIG. 10 is a cross-sectional diagram of a particular illustrativeembodiment depicting a magnetic random access memory after etch of thesecond spin-on material layer, the first spin-on material and the caplayer during fabrication of the magnetic random access memory;

FIG. 11 is a cross-sectional diagram of a particular illustrativeembodiment of a magnetic random access memory including a conductinglayer in contact with corresponding contact electrodes of magnetictunneling junctions of the magnetic random access memory in fabrication;

FIG. 12 is a diagram of a particular illustrative embodiment depictingnon-uniform deposition of a spin-on material layer to fabricate amagnetic random access memory; and

FIG. 13 is a flow chart of a particular illustrative embodiment of amethod of fabricating a magnetic random access memory.

VI. DETAILED DESCRIPTION

Referring to FIG. 1, a particular illustrative embodiment depictingdeposition of a cap layer of a magnetic random access memory infabrication is generally designated 100. A magnetic random access memory102 is fabricated on a substrate 103 and includes a plurality ofmagnetic tunnel junction structures (MTJs) including representative MTJs104, 130, 140, 150, 160, 170, and 180. A material 120 being deposited onthe magnetic random access memory 102 forms a cap layer 112. In aparticular illustrative embodiment, the material 120 is silicon nitride,silicon carbide, or another electrically insulating material, or acombination of materials. In fabricating the magnetic random accessmemory 102, deposition of the material 120 typically occurs prior todeposition of an interlayer dielectric layer and a protective spin-onmaterial layer.

Referring to FIG. 2, a cross-sectional diagram of a particularillustrative embodiment depicting deposition of an interlayer dielectric(ILD) of a magnetic random access memory in fabrication is depicted andgenerally designated 200. An MRAM 202 has been partially formed on asubstrate 203. The MRAM 202 includes a plurality of magnetic tunneljunction (MTJ) cells including MTJ 204. The MTJ 204 includes a lowerferromagnetic layer 206 (also called a “fixed layer” or a “pinned layer”herein), a tunneling barrier 208, and a top electrode contact layer 210(also “ferromagnetic free layer” or “free layer” herein). The MTJ 204 issubstantially surrounded by a cap layer 212 that may cover the substrate203. The MTJ 204 may be surrounded by an interlayer dielectric (ILD)layer 214 formed by depositing an interlayer dielectric (ILD) material224 over the cap layer 212. The deposition of the interlayer dielectricmaterial 224 may be accomplished by e.g., chemical vapor deposition,physical vapor deposition, or by another deposition technique. In aparticular illustrative example the interlayer dielectric material 224may be silicon oxide or another electrically insulating material.

Referring to FIG. 3, a cross-sectional diagram of a particularillustrative embodiment depicting a chemical-mechanical planarization(CMP) of a magnetic random access memory in fabrication is shown andgenerally designated 300. In a particular embodiment, FIG. 3 depicts aCMP stage of fabrication of the MRAM 202 of FIG. 2. A magnetic randomaccess memory 302 includes a plurality of MTJ cells, such as MTJ cell304. Each of the MTJ cells is surrounded by ILD material forming an ILDlayer 314, and each of the MTJ cells is covered by the ILD layer 314.The MRAM 302, fabricated on a substrate 303, is placed on a mountingapparatus 301 that is rotatable. A chemical dispenser 322 may dispense achemical 324 to be used in a planarizing process. A mechanicalplanarizing apparatus 320 that is rotatable may be used in conjunctionwith the dispensed chemical 324 to planarize an upper portion of theMRAM 302 including the ILD layer 314.

Referring to FIG. 4, a cross-sectional diagram of a particularillustrative embodiment of a magnetic random access memory infabrication is depicted and generally designated 400. In a particularembodiment, FIG. 4 depicts a post-planarization stage of fabrication ofthe MRAM 202 of FIG. 2. A magnetic random access memory 402 infabrication includes a plurality of MTJs, such as MTJ 404. The MRAM 402has been planarized, through, e.g., chemical-mechanical planarization asdepicted in FIG. 3, or via another planarization technique. A cap layer412 protects internal portions of the MTJ 404, including a top electrodecontact layer portion 410, a tunneling barrier 408, and a pinned layer406. As a result of planarization, an ILD layer 414 surrounding the caplayer 412 has been partially removed, exposing an uppermost cap layerportion 416 of the cap layer 412. During a subsequent etch procedure thecap layer 412, which is typically made of a different material than theILD layer 414, may etch at a slower rate than the ILD layer 414. Withoutan additional protective layer, recession of the ILD layer 414 aroundeach MTJ may occur during the etch procedure.

Referring to FIG. 5, a cross-sectional diagram of a particularillustrative embodiment depicting deposition of a spin-on material (SOM)layer of a magnetic random access memory in fabrication is generallydesignated 500. In a particular embodiment, FIG. 5 depicts an SOMdeposition stage of fabrication of the MRAM 202 of FIG. 2. An MRAM 502includes a plurality of MTJs, such as MTJ 504. The MRAM 502 may bedisposed on a support structure 501 that is rotatable. An SOM dispenser540 may be positioned radially relative to the support structure 501,measured by a radial distance 544 from an axis of rotation 546 of thesupport structure 501. The SOM dispenser 540 may dispense spin-onmaterial (SOM) 542 while the support structure 501 is rotating.Rotational angular acceleration and angular speed of rotation of thesupport structure 501 can be adjusted. The radial distance 544 may bevaried during deposition, enabling the spin-on material to be depositedacross an upper portion of the MRAM 502. Adjusting the rotationalangular acceleration and the angular speed of rotation of the supportstructure 501 can change a thickness profile (also called radial profileherein) and a thickness uniformity of an SOM layer 530 deposited. Byvarying the radial distance 544 during deposition of the SOM 542 the SOMlayer 530 may be formed that covers an ILD layer 514 and a cap layer512, both of which have been previously deposited with the ILD layer 514situated between a bottom portion of the cap layer 513 and the SOM layer530.

A radial profile of the SOM layer 530, i.e., thickness of the SOM layer530 as a function of distance from a center of the MRAM 502, may bepre-determined by selecting a profile of dispenser radial speed as afunction of time. For example, selecting a uniform radial speed of theSOM dispenser 540 to dispense SOM at a substantially constant rate asthe support structure 501 rotates may produce an SOM layer 530 withsubstantially uniform thickness. In another particular illustrativeembodiment, selecting a non-uniform radial speed of the dispenser 540during rotation of the support structure 501 may produce a non-uniformprofile, such as a concave-shaped profile or a convex-shaped profile, asillustrative, non-limiting examples. After dispensing of the SOM 542 iscomplete, adjusting the angular speed of rotation and the rotationalangular acceleration of the support structure 501 can also modify theradial profile and thickness uniformity of the SOM layer 530.

Referring to FIG. 6, a cross-sectional diagram of a particularillustrative embodiment depicting etching of a spin-on material layerand a cap layer of a magnetic random access memory in fabrication isshown and generally designated 600. In a particular embodiment, FIG. 6depicts an etching stage of fabrication of the MRAM 202 of FIG. 2. AnMRAM 602 includes a plurality of MTJs, such as MTJ 604, and may besubjected to an etch procedure, such as a dry etch or a wet etch, whichmay be performed by immersing of a portion of the MRAM 602 in a chemicaletching chamber 650. Prior to the etch procedure a cap layer 612, an ILDlayer 614, and an SOM layer 630 have been deposited over a top electrodecontact layer portion 610. A top electrode contact layer portion 610 ofthe MTJ 604 may be protected from the chemical etching chamber 650during the etch procedure by the cap layer 612. During the etchprocedure, portions of the SOM layer 630 may be etched, and whenportions of the cap layer 612 become exposed to the chemical etchingchamber 650 the exposed portions of the cap layer 612 may be etched aswell. The SOM layer 630 may serve to protect the ILD layer 614 frombeing etched by the chemical etching chamber 650. The SOM layer 630 mayalso protect the cap layer 612 from being etched. After etching aportion of the SOM layer 630, a portion of the cap layer 612 may beexposed to the chemical etching chamber 650. Unetched portions of theSOM layer 630 may continue to protect the ILD layer 614 from thechemical etching chamber 650.

Referring to FIG. 7, a cross-sectional diagram of a particularillustrative embodiment depicting a random access memory after etchingof the spin-on material layer and the cap layer during fabrication isdepicted. In a particular embodiment, FIG. 7 depicts a post-etchingstage of fabrication of the MRAM 202 of FIG. 2. An MRAM 702 includes aplurality of MTJs, such as MTJ 704. A portion of a cap layer 712 hasbeen etched away to expose a top electrode contact portion 710 of theMTJ 704. An ILD layer 714 may be protected by portions of an SOM layer730 during an etching stage of fabrication. The ILD layer 714 can remainintact and may provide structural support to a sidewall portion 713 ofthe cap layer 712. The top electrode contact portion 710 of the MTJ 704may subsequently be placed in contact with a conducting layer (notshown). In similar fashion, each of the MTJs of the MRAM 702 may have aportion of the cap layer 712 removed to expose a top electrode contactportion (also “top electrode contact window” herein) of thecorresponding MTJ. Opening of the top electrode contact portion of MTJcan be detected by a visual inspection or by use of an electrical probe,such as an electrical probe 760, making electrical contact with the topelectrode portion 710 of the MTJ 704.

A corresponding top electrode contact portion of each MTJ maysubsequently be placed in contact with the conducting layer. Theconducting layer (not shown) can be patterned to separate each MTJ fromneighboring MTJs. A particular top electrode contact portion of an MTJmay be connected to a conducting layer. The conducting layer may beconnected to routing metal wire to make a connection (not shown).

Referring to FIG. 8, a cross-sectional diagram of a particularillustrative embodiment depicting deposition of a second spin-onmaterial (SOM) layer of a magnetic random access memory duringfabrication is generally designated 800. An MRAM 802 in fabricationincludes a plurality of MTJs, such as an MTJ 804. The MRAM 802 isfabricated on a substrate 803, which is disposed on a rotatable supportstructure 801. A SOM dispenser 840 may dispense SOM 842 onto a portionof the MRAM 802. The dispenser 840 may be positioned at a radialdistance 844 with respect to an axis of rotation 846 of the rotatablesupport structure 801, and the radial distance 844 may be varied intime. The MRAM 802 includes a first layer of SOM 830 that has beenpreviously deposited and etched, which covers and protects a cap layer812 and an ILD layer 814, each of which surrounds each MTJ. Portions ofthe first layer of SOM 830 may have been removed through an etchingprocess. The SOM 842 deposited on the MRAM 802 forms a second SOM layer832, which further covers and protects the cap layer 812 and the ILDlayer 814. In another particular illustrative embodiment, the firstlayer of SOM 830 may be stripped before second SOM 842 is deposited. Thesupport structure 801 may have a selectable rotational speed that may bevaried over time or may be substantially constant over time. The radialdistance 844 of the dispenser may be changed over time with a constantradial speed profile or a non-linear radial speed profile.

The second SOM layer 832 may be deposited above the first SOM layer 830with a selectable layer thickness profile. In a particular illustrativeexample, the radial speed profile of the dispenser 840 is non-linear anda profile of the resultant second SOM layer 832 deposited on the firstSOM layer 830 may be convex or concave, depending on the radial speedprofile of the dispenser 840 as the support structure 801 is rotated. Inanother particular illustrative example, the radial speed of thedispenser 840 is constant and the second SOM layer 832 will have anapproximately constant thickness across the first SOM layer 830. Thesecond SOM layer 832 may provide additional protection against a secondetch procedure during fabrication of the MRAM 802.

Referring to FIG. 9, a cross-sectional diagram of a particularillustrative embodiment depicting etch of a second spin-on materiallayer and a cap layer of a magnetic random access memory in fabricationis shown. An MRAM 902 including a plurality of MTJs, such as MTJ 904, issubjected to an etch procedure by immersing a portion of the MRAM 902into an etching chamber 950. The MRAM 902 includes a second SOM layer932 that has been previously deposited above a first SOM layer 930. Thesecond SOM layer 932 provides additional protection to a cap layer 912that may also be protected from the etching chamber 950 by the first SOMlayer 930. The second SOM layer 932 and the first SOM layer 930 may alsoprotect an ILD layer 914 during the etch procedure. By depositingmultiple SOM layers on the MRAM 902 etching may be controlled so that anupper electrode contact layer portion of one of the MTJs, such as anupper electrode contact layer portion 910, may be exposed withoutetching a significant amount of the ILD layer 914 surrounding each MTJ.In a particular illustrative embodiment, etching may occur after eachdeposition of an SOM layer on the MRAM 902. By reducing etching of theILD layer 914 that surrounds each MTJ, the ILD layer 914 may enhancestructural integrity of the MRAM 902 by supporting sidewall portions 913of the cap layer 912 that surround each MTJ. By adding the second SOMlayer 932, MRAM device yield may be improved through a larger acceptablewindow of process parameters such as etch duration.

Referring to FIG. 10, a cross-sectional diagram of a particularillustrative embodiment depicting a magnetic random access memory (MRAM)after etch during fabrication of the magnetic random access memory isdepicted. An MRAM 1002 has been subjected to one or more etch proceduresand includes a first SOM layer 1030 and a second SOM layer 1032. Anuppermost portion of a cap layer 1012 has been removed via the etchprocedures, exposing a top electrode contact layer portion 1010. Theupper electrode contact layer portion 1010 may be subsequently connectedto an electrical contact layer (not shown). Sidewall portions of the caplayer 1012, including a sidewall portion 1013, have been protected frometching by the first SOM layer 1030 and the second SOM layer 1032.Portions of the first SOM layer 1030 and the second SOM layer 1032 havebeen removed. Remaining portions of the first SOM layer 1030 and thesecond SOM layer 1032 may protect the ILD layer 1014 that surrounds eachMTJ, and the ILD layer 1014 may increase structural integrity of eachMTJ. Through multiple SOM deposition-etching cycles that open the upperelectrode contact layer portion 910, structural integrity of the MRAM1002 may be improved and a manufacturing process window of processparameters, such as etch uniformity and selectivity, may be relaxed.Both structural integrity of the MRAM 1002 and an expanded manufacturingprocess window can enhance manufacturing yield.

Referring to FIG. 11, a particular illustrative embodiment of a magneticrandom access memory (MRAM) is depicted and generally designated 1100.An MRAM 1100 in fabrication, which includes a plurality of MTJs, such asMTJ 1104, has been subjected to etching, exposing a top electrodecontact layer portion 1110. The top electrode contact layer portion 1110is shown to be in contact with an electrical conducting layer 1170 thathas been deposited subsequent to etching. A cap layer 1112 includes sidewall portions such as a side wall portion 1113, which protectselectrically active portions of the MTJ 1104. An SOM layer 1130 protectsan ILD layer 1114 that surrounds each MTJ. The top electrode contactlayer portion 1110 may be patterned to separate each MTJ from otherMTJs. Each MTJ may be connected to the outside world via the electricalconducting layer 1170. By depositing one or more SOM layers 1130 thatprotect the ILD layer 1114 and protect portions of the cap layer 1112such as the sidewall portion 1113 during etching, an MRAM manufacturingprocess parameter window may be increased and a greater yield may beachieved.

Referring to FIG. 12, a diagram of a particular illustrative embodimentdepicting non-uniform deposition of a spin-on material layer tofabricate a magnetic random access memory (MRAM) is generally designated1200. A substrate 1203 is disposed on a rotatable mounting structure1201. The substrate 1203 has been partially patterned to form an MRAMincluding one or more MTJs such as the MTJ 404 of FIG. 4. An SOMdispenser 1240 may be positioned at an adjustable radial distance 1244from an axis of rotation 1246 of the mounting structure 1201, and theradial distance 1244 may change over time. The dispenser 1240 maydispense SOM material 1242 that is deposited on the substrate 1201. Arate of dispensing SOM material through the dispenser 1240 may beselectable. In a particular illustrative embodiment, the dispensing ratemay be selected to be substantially constant over time. In anotherparticular illustrative embodiment, the dispensing rate may be selectedto be variable over time. A rate of radial speed of the dispenser 1240may be selectable. Through selection of a radial speed profile (radialdistance over time) and selection of the dispensing rate of SOM liquidvia the SOM dispenser 1240, a pre-determined thickness profile of adeposited SOM layer 1230 may be produced. In one particular non-limitingillustrative example, a uniform dispensing rate and a constant radialspeed of the dispenser 1240 may result in a deposited SOM layer having asubstantially constant thickness across the substrate 1201. In anotherparticular illustrative example, a non-uniform dispensing rate of theSOM liquid 1242 and a uniform or non-uniform radial velocity profile ofthe dispenser 1240 may result in a non-uniform thickness profile of theSOM layer 1230. In yet another particular illustrative example, auniform dispensing of the SOM liquid and a non-uniform radial velocityprofile of the dispenser 1240 can result in a non-uniform thicknessprofile of the SOM layer 1230. The thickness profile may be constant,convex or concave, depending on factors that may include the dispensingrate profile of the SOM liquid and the radial speed profile of thedispenser 1240.

In a particular illustrative embodiment outer portions, i.e.,circumferential portions of a substrate may experience greater etchrates than centermost portions, and a concave-shaped SOM layer 1230shape may be advantageous during etching to protect outer portions ofthe substrate 1201 and on MRAM (not shown) in fabrication on thesubstrate 1201. In a particular illustrative example, a non-uniform SOMlayer thickness profile 1280 may be employed to afford greaterprotection to circumferential portions of the substrate 1201 during anetching process. For instance, the SOM layer thickness profile 1280shows thickness varying substantially linearly with a radial distancefrom a center of the substrate 1201, producing a concave-shaped SOMlayer 1230. A non-uniform SOM thickness profile such as a concave shapedthickness profile may provide protection to outer portions of a MRAMstructure in fabrication on a wafer against over-etching duringfabrication of the MRAM. The non-uniform SOM thickness profile cancompensate for substrate non-uniformity and make a top portion of eachof the MTJ structures more uniform.

Referring to FIG. 13, a flow chart of a particular illustrativeembodiment of a method of fabricating a magnetic random access memory isdepicted. At block 1302, an interlayer dielectric (ILD) film isdeposited onto a Magnetic Tunnel Junction (MTJ) cap layer of a MagneticRandom Access Memory (MRAM). Proceeding to block 1304, achemical-mechanical planarization (CMP) process is applied to the ILDlayer. Advancing to block 1306, a spin-on material (SOM), e.g., spin-onglass, photoresist, anti-reflective coating, organic material, orinorganic material, is deposited over the MTJ cap layer and the ILDlayer, and may serve to protect the cap layer and the ILD layer duringan etch procedure. (A densification heating process may also be appliedif inorganic SOM materials are used.) Moving to block 1308, an etchprocedure is performed, etching the SOM layer and portions of the caplayer that may become exposed. (If the SOM is organic material, the SOMmay be stripped after etching.) Proceeding to decision block 1310, adetermination is made as to whether a top electrode contact layer window(also “top electrode contact layer portion” herein) is open. When thetop electrode contact layer window is open at each of the MTJs, themethod terminates at 1314. When the top electrode contact window is notopen at each of the MTJs, the method proceeds to decision block 1312,where a determination is made as to whether an additional SOM layershould be deposited to further protect the ILD and portions of the caplayer during a subsequent etch procedure. When the determination is madeto deposit the additional SOM layer prior to the subsequent etchprocedure, returning to block 1306 the additional SOM layer is depositedprior to the subsequent etch at block 1308. When it is determined, atblock 1312, not to add another SOM layer, processing continues with anadditional etch procedure performed on the previously deposited SOMlayer and portions of the cap layer, at block 1308.

The previous description of the disclosed embodiments is provided toenable any person skilled in the art to make or use the disclosedembodiments. Various modifications to these embodiments will be readilyapparent to those skilled in the art, and the principles defined hereinmay be applied to other embodiments without departing from the scope ofthe disclosure. Thus, the present disclosure is not intended to belimited to the embodiments shown herein but is to be accorded the widestscope possible consistent with the principles and novel features asdefined by the following claims.

1. A device comprising: a magnetic tunnel junction (MTJ) structure; acap layer in contact with the MTJ structure; a spin-on material layer incontact with a sidewall portion of the cap layer; and a conducting layerin contact with at least the spin-on material layer and a portion of theMTJ structure; wherein the cap layer has been etched to expose a portionof an electrode contact layer of the MTJ structure, and wherein theconducting layer is in electrical contact with the exposed portion ofthe electrode contact layer of the MTJ structure.
 2. The device of claim1, wherein the spin-on material layer comprises an inorganic material.3. The device of claim 1, wherein the spin-on material layer comprisesan organic material.
 4. The device of claim 1, further comprising aninterlayer dielectric (ILD) layer, wherein the ILD layer is situatedbetween a portion of the cap layer and the spin-on material layer. 5.The device of claim 1, wherein prior to etching of the cap layer, thespin-on material layer covers a portion of the cap layer.
 6. The deviceof claim 1, wherein prior to etching the spin-on material layer, acenter thickness of the spin-on material layer differs from an outerthickness of the spin-on material layer.
 7. A device comprising: amagnetic tunnel junction (MTJ) structure; a cap layer in contact withthe MTJ structure; and a spin-on material layer in contact with the caplayer; wherein the device is formed by: depositing the cap layer on theMTJ structure; depositing the spin-on material layer over the cap layer;and etching the spin-on material layer and at least a portion of the caplayer.
 8. The device of claim 7, further comprising an interlayerdielectric (ILD) layer, wherein the ILD layer is situated between abottom portion of the cap layer and the spin-on material layer.
 9. Thedevice of claim 7, wherein the device is further formed by controlling aprofile of the spin-on material so that a center thickness of thespin-on material layer differs from an outer thickness of the spin-onmaterial layer.
 10. The device of claim 7, wherein the profile of thespin-on material is convex.
 11. The device of claim 7, wherein theprofile of the spin-on material is concave.
 12. The device of claim 7,wherein the spin-on material is one of spin-on glass, a photoresistmaterial, and an organic anti-reflection coating (ARC) material.
 13. Adevice comprising: a magnetic tunnel junction (MTJ) structure; a caplayer in contact with the MTJ structure; and a first spin-on materiallayer in contact with the cap layer; wherein the device is formed by:depositing the cap layer on the MTJ structure; selecting one of a convexprofile and a concave profile of the first spin-on material layer;depositing the first spin-on material layer over the cap layer; andetching the first spin-on material layer and at least a portion of thecap layer.
 14. The device of claim 13, wherein a center thickness of thefirst spin-on material layer differs from an outer thickness of thefirst spin-on material layer.
 15. The device of claim 13, wherein thedevice is further formed by depositing a second spin-on material layeron the first spin-on material layer, wherein the second spin-on materiallayer is deposited with a selectable layer thickness profile.
 16. Thedevice of claim 15, wherein the device is further formed by strippingthe first spin-on material layer before depositing the second spin-onmaterial layer is deposited.
 17. The device of claim 15, wherein theselectable layer thickness profile of the second spin-on material layeris a uniform profile that results in the second spin-on material layerhaving a substantially uniform thickness.
 18. The device of claim 15,wherein the selectable layer thickness profile is a non-uniform profilethat results in the second spin-on material layer having a non-uniformthickness.
 19. The device of claim 18, wherein the non-uniform profileis one of a concave-shaped profile and a convex-shaped profile.
 20. Thedevice of claim 13, wherein the second spin-on material is one ofspin-on glass, a photoresist material, and an organic anti-reflectioncoating (ARC) material.
 21. A device comprising: a magnetic tunneljunction (MTJ) structure; a cap layer in contact with the MTJ structure;and means for protecting sidewall portions of the cap layer during anetching process; wherein prior to the etching process, a profile of themeans for protecting sidewall portions of the cap layer is controlled.22. The device of claim 21, wherein the profile of the means ofprotecting sidewall portions of the cap layer is controlled so that acenter thickness of a deposited layer differs from an outer thickness ofthe deposited layer.
 23. A device comprising: a magnetic tunnel junction(MTJ) structure; a cap layer in contact with the MTJ structure; and afirst spin-on material layer in contact with the cap layer; wherein thedevice is formed by: a first step for depositing the cap layer on theMTJ structure; a second step for selecting one of a convex profile and aconcave profile of the first spin-on material layer; a third step fordepositing the first spin-on material layer over the cap layer; and afourth step for etching the first spin-on material layer and at least aportion of the cap layer.
 24. The device of claim 23, wherein the firststep, the second step, and the third step are performed by a processorintegrated into an electronic device.